方法：将培养的人晶状体上皮细胞系HLE-B3细胞暴露于电场强度为100、200、400mV/mm的直流电场中，未受电场暴露的细胞作为正常对照组。倒置显微镜观察并记录电场暴露前及暴露后的细胞图像，并计数细胞数目； 流式细胞仪检测电场暴露前及暴露24h后的细胞凋亡率和细胞周期。

结果：强度为400mV/mm的电场暴露3h后，HLE-B3细胞呈现朝向电场阴极一侧的定向移行。电场持续暴露后，HLE-B3细胞数逐渐减少，在电场作用6h和12h时分别较正常对照组减少 12.6%和18.6%，差异均具有统计学意义(P<0.05)。100、200、400mV/mm电场暴露24h后，HLE-B3细胞凋亡率分别为(9.2±1.9)%、(23.9±2.6)%、(54±2.5)%，与正常对照组相比明显增加(P<0.05)； 细胞周期检测结果显示，HLE-B3细胞进入G₂/M期的比例随电场强度增加逐渐上升，其中200mV/mm 和400mV/mm电场中G₂/M期细胞比例分别为(13.8±2.2)%和(15.6±2.5)%，与正常对照组相比差异具有统计学意义(P<0.05)。

结论：外加直流电场可诱导HLE-B3细胞的定向移行，随电场作用时间的延长和电场强度增加，细胞生长受到抑制，同时伴随细胞凋亡增加和细胞周期G₂/M期阻滞。

METHODS: HLE-B3 cells were exposed to EF at 100mV/mm, 200mV/mm and 400mV/mm, respectively. Cells without EF-exposure were treated as normal controls. Photos of HLE-B3 cells were captured before and after EF-exposure, and the cell numbers were calculated. Apoptosis and cell cycle were detected with flow cytometry after EF-exposure for 24h.

RESULTS: After exposure to EF at 400mV/mm for 3h, HLE-B3 cells showed directed migration to the cathode. The cell number of HLE-B3 cells decreased gradually with continuous EF-exposure, and decreased by 12.6% at 6h and by 18.6% at 12h, respectively(P<0.05). After exposure to EF at 100mV/mm, 200mV/mm and 400mV/mm for 24h, the apoptosis rates of HLE-B3 cells increased dramatically compared to that of the normal control, which were(9.2±1.9)%,(23.9±2.6)% and(54±2.5)%, respectively(P<0.05). Accordingly, the results of flow cytometry showed that cell numbers in G2/M phase were increased after EF-exposure, which were(13.8±2.2)% and(15.6±2.5)% at 200mV/mm and 400mV/mm, respectively(P<0.05).

CONCLUSION: Applied direct EF induces directed migration of HLE-B3 cells and inhibits the cell growth with the prolongation of the EF-exposure time. EF also induces cell apoptosis and G2/M phase inhibition of the cell cycle in HLE-B3 cells.